| 多晶SiGe栅量子阱pMOSFET阈值电压模型 |
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| 引用本文： | 屈江涛,张鹤鸣,王冠宇,王晓艳,胡辉勇.多晶SiGe栅量子阱pMOSFET阈值电压模型[J].物理学报,2011,60(5):58502-058502. |
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| 作者姓名： | 屈江涛 张鹤鸣 王冠宇 王晓艳 胡辉勇 |
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| 作者单位： | 西安电子科技大学微电子学院,宽禁带半导体材料与器件重点实验室,西安 710071 |
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| 基金项目： | 国家部委项目(批准号:51308040203,9140A08060407DZ0103,6139801)资助的课题. |
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| 摘 要： | 本文基于多晶SiGe栅量子阱SiGe pMOSFET器件物理,考虑沟道反型时自由载流子对器件纵向电势的影响,通过求解泊松方程,建立了p+多晶SiGe栅量子阱沟道pMOS阈值电压和表面寄生沟道开启电压模型.应用MATLAB对该器件模型进行了数值分析,讨论了多晶Si1-yGey栅Ge组分、Si1-xGex量子阱沟道Ge组分、栅氧化层厚度、Si帽层厚度、沟道区掺杂浓度和
关键词：
多晶SiGe栅
寄生沟道
量子阱沟道
阈值电压
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| 关 键 词： | 多晶SiGe栅 寄生沟道 量子阱沟道 阈值电压 |
| 收稿时间： | 6/4/2010 12:00:00 AM |
Threshold voltage model for quantum-well channel pMOSFET with poly SiGe gate |
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| Qu Jiang-Tao,Zhang He-Ming,Wang Guan-Yu,Wang Xiao-Yan,Hu Hui-Yong.Threshold voltage model for quantum-well channel pMOSFET with poly SiGe gate[J].Acta Physica Sinica,2011,60(5):58502-058502. |
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| Authors: | Qu Jiang-Tao Zhang He-Ming Wang Guan-Yu Wang Xiao-Yan Hu Hui-Yong |
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| Institution: | Key Lab of Wide Band-Gap Semiconductor Materials and Devices, School of Microelectronics,Xidian University, Xi'an 710071, China;Key Lab of Wide Band-Gap Semiconductor Materials and Devices, School of Microelectronics,Xidian University, Xi'an 710071, China;Key Lab of Wide Band-Gap Semiconductor Materials and Devices, School of Microelectronics,Xidian University, Xi'an 710071, China;Key Lab of Wide Band-Gap Semiconductor Materials and Devices, School of Microelectronics,Xidian University, Xi'an 710071, China;Key Lab of Wide Band-Gap Semiconductor Materials and Devices, School of Microelectronics,Xidian University, Xi'an 710071, China |
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| Abstract: | In this paper, threshold voltage model of quantum-well channel pMOSFET with p+polycrystalline SiGe gate and its cut-in voltage model were established based on solving Poisson equation while considering the impact of free carrier. The effects of relevant parameters (Ge concentration of poly SiGe gate, Ge concentration of quantum-well SiGe channel, thickness of oxide layer, thickness of Si cap layer, doping content of quantum-well SiGe channel, and doping content of substrate) on threshold voltage and cut-in voltage of the parasitic channel was analysed by numerical analysis, and obtained the methods to restrain the opening of parasitic channel. The results of the models are in good agreement wih that of experiment reported as well as of ISE simulation. |
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| Keywords: | polycrystalline SiGe gate parasitic channel quantum-well channel threshold voltage |
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