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Optical orientation and spin relaxation of resident electrons in n-doped InAs/GaAs self-assembled quantum dots
Authors:S Laurent  O Krebs  S Cortez  M Senes  X Marie  T Amand  P Voisin  J -M Grard
Institution:a Laboratoire de Photonique et Nanostructures, CNRS, Route de Nozay, 91460, Marcoussis, France;b Laboratoire de Physique de la Matière Condensée, INSA-CNRS, 135 Avenue de Rangueil, 31077 Toulouse, Cedex 4, France;c CEA/DRFMC/SP2M/PSC, 17 avenue des Martyrs, 38054 Grenoble, Cedex 9, France
Abstract:We report on optical orientation of electrons in n-doped InAs/GaAs quantum dots. Under non-resonant cw optical pumping, we measure a negative circular polarization of the luminescence of charged excitons (or trions) at low temperature (T=10 K). The dynamics of the recombination and of the circular polarization is studied by time-resolved spectroscopy. We discuss a simple theoretical model for the trion relaxation, that accounts for this remarkable polarization reversal. The interpretation relies on the bypass of Pauli blocking allowed by the anisotropic electron–hole exchange. Eventually, the spin relaxation time of doping electrons trapped in quantum dots is measured by a non-resonant pump–probe experiment.
Keywords:Spin relaxation  InAs quantum dot  Trion
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