Electrical properties of polyimide on n-GaAs (100) interfaces by a pulsed laser evaporation technique |
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| Authors: | G. N. Chaudhari V. J. Rao |
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| Affiliation: | (1) Material Science Group, Physical and Inorganic Chemistry Division, Indian Institute of Chemical Technology, 500 007 Hyderadad, India |
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| Abstract: | Incorporation of a thin insulating layer of polymer-like polyimide deposited by pulsed laser evaporation technique between metal and n-GaAs has resulted in diode structures with MIS and Schottky-barrier-type capacitance-voltage and current-voltage characteristics. These structures have the potential to be useful in improving the performance of GaAs FETs for microwave and high-speed applications.IICT communication No. 2934 |
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| Keywords: | 73.40 81.10 81.15 |
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