Photoluminescence spectra of the AgGaTe2 single crystals doped with hydrogen |
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| Authors: | I. V. Bodnar’ V. F. Gremenok R. W. Martin M. V. Yakushev |
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| Affiliation: | (1) Belarussian State University of Informatics and Electronics, Minsk, 220027, Belarus;(2) Institute of Solid State Physics and Semiconductors, National Academy of Sciences of Belarus, Minsk, 220072, Belarus;(3) Department of Physics and Applied Physics, Strathclyde University, Glasgow, G4 ONG, UK;(4) Department of Physics, University of Salford, Salford, M5 4WT, UK |
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| Abstract: | The photoluminescence spectra of single crystals of the ternary AgGaTe2 compound obtained by the Bridgman-Stockbarger method are studied before and after bombardment by the 100-eV hydrogen ions of dose 1015 cm?2. The spectra were detected in the temperature range from 10 to 300 K at various powers of laser excitation. The spectra exhibit emission bands related to the donor-acceptor recombination, free, and bound excitons. The intensity of these bands in crystals doped with hydrogen is higher than that in undoped crystals. This is explained by the passivation of defects in a crystal lattice by hydrogen. The binding energy of a free exciton and the band gap in AgGaTe2 crystals are calculated at 10 K. |
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