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Raman studies on the effect of multiple-energy ion implantation on single-crystal hexagonal boron nitride |
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| Authors: | E Aradi SR Naidoo RM Erasmus B Julies TE Derry |
| Institution: | 1. DST-NRF Centre of Excellence in Strong Materials and the School of Physics, University of the Witwatersrand, Private Bag 3 Johannesburg, Johannesburg, South Africa395719@students.wits.ac.zaaradi.emily@gmail.com;4. DST-NRF Centre of Excellence in Strong Materials and the School of Physics, University of the Witwatersrand, Private Bag 3 Johannesburg, Johannesburg, South Africa;5. Department of Physics, University of the Western Cape, Private Bag X7 Belville, Cape Town, South Africa |
| Abstract: | Single energy ion implantation of hexagonal boron nitride (h-BN) at various fluences and keV energies has shown that there is a change in the local symmetry of the crystal from hexagonal to the cubic (c-BN) symmetry. These conclusions have been primarily based on Raman scattering (RS) and Fourier transform infrared spectroscopy. Transmission electron microscopy (TEM) analyses have been a challenge because the sample preparation for cross-sectional study of both the polycrystalline substrates and single-crystal material used in the study presented problems that were difficult to circumvent. A multiple-energy implant with different fluence fractions has been used to create a uniform implanted layer in the material from the surface to the end of range of the implant in this study. We report on the initial RS studies on these samples. |
| Keywords: | ion implantation boron nitride Raman spectroscopy |