Temperature characterization of Raman scattering in an AlGaN/GaN heterostructure |
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Authors: | DJ Chen B Shen XL Wu JC Shen FJ Xu KX Zhang R Zhang RL Jiang Y Shi YD Zheng |
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Institution: | (1) National Laboratory of Solid State Microstructure and Department of Physics, Nanjing University, Nanjing, 210093, P.R. China |
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Abstract: | Raman scattering from an AlGaN/GaN heterostructure was performed in the temperature range from 77 to 773 K. The first- and second-order Raman scattering of the A1 longitudinal-optical phonon–plasmon coupled mode from an AlGaN/GaN interface as well as the Raman scattering from the GaN layer were observed. All the modes downshift, and their intensities weaken with increasing temperature. The free-carrier concentration estimated by the frequency of the coupled mode from an AlGaN/GaN interface is 7.5 times as high as that of n-AlGaN, indicating mass free-carrier transfer from the AlGaN barrier to the GaN well. Moreover, the temperature dependence of the phonon frequency is well described by an empirical formula. PACS 78.30.Fs; 63.20.Ls; 61.82.Fk; 68.60.Dv; 81.15.Gh |
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