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Quantum-dot structures measuring Hamming distance for associative memories
Authors:Takashi Morie  Tomohiro Matsuura  Satoshi Miyata  Toshio Yamanaka  Makoto Nagata  Atsushi Iwata
Institution:1. Department of Mathematics, School of Advanced Sciences, Vellore Institute of Technology (VIT), Vellore, India;2. School of Electronics Engineering, Vellore Institute of Technology (VIT), Vellore, India;3. School of Computer Science and Engineering, Vellore Institute of Technology (VIT), Vellore, India;1. Department of Physics, National Taiwan University, Taipei, Taiwan;2. Quantum Computing Research Center, Hon Hai Research Institute, Taipei, Taiwan;3. Department of Information and Computer Engineering, Chung Yuan Christian University, Chungli, Taiwan;4. Department of Physics, National Sun Yat-sen University, Kaohsiung, Taiwan;5. Department of Mathematics & Statistics, University of Guelph, Guelph N1G 2W1, ON, Canada;6. Institute for Quantum Computing, University of Waterloo, Waterloo N2L 3G1, ON, Canada;7. Department of Physics, The Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong, China;8. Department of Optoelectric Physics, Chinese Culture University, 55 Hwa-Kang Road, Yang-Ming-Shan, Taipei, Taiwan;9. Graduate Institute of Applied Physics and NTU-IBM Quantum Hub, National Taiwan University, Taipei, Taiwan
Abstract:Two types of quantum-dot circuits measuring a Hamming distance using the Coulomb repulsion effect are proposed and analysed. They have structures where a quantum-dot array is arranged on a gate electrode of an ultrasmall MOSFET. The device parameters for successful operation are clarified from Monte Carlo simulation.
Keywords:quantum dots  single-electron devices  Coulomb repulsion  Hamming distance  associative memory  
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