Hollow boron nitride (BN) nanocages and BN-nanocage-encapsulated nanocrystals |
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Authors: | Zhu Ying-Chun Bando Yoshio Yin Long-Wei Golberg Dmitri |
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Affiliation: | Advanced Materials Laboratory, National Institute for Materials Science (NIMS), Namiki 1-1, Tsukuba, Ibaraki 305-0044, Japan. yingchunzhu@yahoo.com |
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Abstract: | Hollow boron nitride (BN) nanocages (nanospheres, image on the left) and BN-nanocage-encapsulated GaN nanocrystals (right) have been synthesized by using a homemade B-N-O precursors. The as-prepared BN hollow nanocages have typically spherical morphologies with diameters ranging from 30 to 200 nm. The nanocages have crystalline structures. Peanutlike nanocages with double walls have also been observed; their internal space is divided into seperated compartments by the internal walls. The method is extended to sheathe nanocrystals with BN nanocages; BN-shell/GaN-core nanostructures have been successfully fabriacted. The method may be generally applicable to the fabrication BN-sheathed nanocrystals. |
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Keywords: | boron nitride boron nanostructures nitrogen |
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