Electron-phonon interaction in boron-doped silicon nanocrystals: Effect of Fano interference on the Raman spectrum |
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| Authors: | V A Volodin M D Efremov |
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| Institution: | (1) Institute of Semiconductor Physics, Siberian Division, Russian Academy of Sciences, Novosibirsk, 630090, Russia |
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| Abstract: | Raman spectroscopy is employed for studying silicon nanocrystal arrays in boron-doped amorphous silicon films. The nanocrystals were formed in the initial amorphous films by the pulsed impact of an excimer laser. The electron-phonon interaction effects are observed experimentally in the heterostructure formed by a silicon nanocrystal and an amorphous matrix. These effects can be described in the framework of the familiar Fano interference model. |
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