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Low-temperature photoluminescence of ion-implanted SiO2:Sn+ films and glasses |
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| Authors: | A F Zatsepin E A Buntov V S Kortov V A Pustovarov H -J Fitting B Schmidt N V Gavrilov |
| Institution: | 1. Ural Federal University, ul. Mira 19, Yekaterinburg, 620002, Russia 2. Institute of Physics, University of Rostock, Universit?tsplatz 3, D-18051, Rostock, Germany 3. Institute of Ion Beam Physics and Materials Research, D-01314, Dresden, Germany 4. Institute of Electrophysics, Ural Branch, Russian Academy of Sciences, ul. Amundsena 106, Yekaterinburg, 620016, Russia |
| Abstract: | Low-temperature photoluminescence spectroscopy with pulsed synchrotron excitation is applied to study the regularities of excitation and relaxation of both point defects and nanoparticles formed by tin implantation into SiO2 films and glasses. It has been found that tin implantation followed by air and nitrogen annealing yields the formation of α-Sn nanoclusters and nonstoichiometric SnO x nanoparticles, while a stable phase of SnO2 does not appear. Alternative channels of luminescence excitation are revealed for nanoclusters, including energy transfer from excitons and electron-hole pairs of the host SiO2 matrix. |
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