Effect of crystallization route on the properties of LiMn2O4 thin films prepared by spin coating

LiMn₂O₄ thin films were prepared by spin coating through intermediate amorphous layer route (IALR) and intermediate crystallized layer route (ICLR). The phase identification, surface morphology, and electrochemical properties of the films prepared by different crystallization routes were studied by X-ray diffraction, scanning electron microscopy, and galvanostatic charge–discharge experiments. The results show that both films prepared by different crystallization routes are homogeneous and crack free. Compared with the film prepared by IALR, the film prepared by ICLR shows smaller grain size and is smoother and denser. The LiMn₂O₄ film prepared by ICLR delivers the specific capacity of 39.8 μAh?cm^?2?μm^?1, which is higher than 35.6 μAh?cm^?2?μm^?1 for the one prepared by IALR. The capacity loss of the film prepared by ICLR after being cycled 100 times is 3.4 %, which is smaller than that of 5.5 % for the film prepared by IALR. The film prepared by ICLR shows higher specific capacity and better cycling behavior than the one prepared by IALR.