Crystalline Inclusions Formed in C+N+BF2 Coimplanted on Silicon (111)

In the present work, high-doses (10¹⁷–10¹⁸cm^–2) of carbon, nitrogen, and boron (BF₂⁺) ions were coimplanted on silicon (111) substrates at 21, 25 and 77keV, respectively. Two series of samples have been implanted (series A and B) and subsequently annealed. Series A samples have been implanted at room temperature and treated one minute by rapid thermal annealing (RTA) and 3 hours at 1200°C. Series B samples have been implanted at 600°C and subsequently annealed at 1200°C during 3 hours. The annealing in both series has been carried out in N₂ at atmospheric pressures.The structure of the buried layers has been determined by conventional and high resolution transmission electron microscopy (CTEM and HRTEM). Polycrystalline silicon and new crystalline phases are observed by electron diffraction patterns. The polycrystalline silicon inclusions have been confirmed from analysis of HRTEM images.