| 铒掺杂富硅热化SiO2／Si发光薄膜的显微结构 |
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| 作者单位： | 徐飞（复旦大学应用物理表面国家重点实验室,上海,200433）;肖志松（北京师范大学射线束技术与材料改性教育部重点实验室,北京师范大学低能核物理研究所,北京市辐射中心,北京,100875）;程国安（南昌大学材料科学与工程系,江西,南昌,330047）;易仲珍（北京师范大学射线束技术与材料改性教育部重点实验室,北京师范大学低能核物理研究所,北京市辐射中心,北京,100875）;曾宇昕（南昌大学材料科学与工程系,江西,南昌,330047）;张通和（北京师范大学射线束技术与材料改性教育部重点实验室,北京师范大学低能核物理研究所,北京市辐射中心,北京,100875）;顾岚岚（复旦大学应用物理表面国家重点实验室,上海,200433） |
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| 基金项目： | 国家自然科学基金项目(69766001)和复旦大学应用表面物理国家重点实验室资助 |
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| 摘 要： | 利用金属蒸气真空弧(MEVVA)离子源将稀土元素Er离子掺杂到富硅热氧化SiO2/Si薄膜中.卢瑟福背散射(RBS)和X-射线电子能谱仪(XPS)分析表明,Er浓度可达原子百分数(x)～10,即Er的原子体浓度为～1021·
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| 关 键 词： | MEVVA离子源 半导体薄膜 铒 光致发光 显微结构 掺杂 SiO2／Si发光薄膜 富硅氧化硅 光谱 |
| 文章编号： | 1000-0593(2001)06-0758-05 |
| 修稿时间： | 2001年2月16日 |
Microstructure of erbium-doped Si-rich thermal oxidation SiO2/Si luminescent thin films] |
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| Authors: | F Xu Z S Xiao G A Cheng Z Z Yi Y X Zeng T H Zhang L L Gu |
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| Institution: | Surface Physics Laboratory, Fudan University, Shanghai 200433, China. |
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| Abstract: | Er ions with 108 keV to a dose of 1 x 10(17) cm-2 were implanted into Si-rich thermal oxidation SiO2/Si thin film using metal vapor vacuum arc (MEVVA) ion source implanter. Er concentration in as-implanted sample, which was attained to -10 at % correspond to the level of -10(21) atoms.cm-3, was analyzed by Rutherford back-scattering (RBS) and X-ray photoelectron spectroscope (XPS). Contents of Er, Si and O in annealed samples were investigated using XPS at room temperature. It showed that Si content was increased and SiO2 content was decreased with increasing the fluence of Si ions. It was found by use dof reflective high energy electron diffraction (RHEED) and atomic force microscope (AFM) that needle micro-crystalline Si in the surface of annealed samples had been formed and Er segregation and precipitation were formed little. Photoluminescence around 1.54 microns from Er-doped Si-rich thermal oxidized SiO2/Si thin film were studied with a He-Cd laser pumping at 414.6 nm at the low temperature of 77 K and room-temperature (RT). |
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