多孔硅层的剥离及反射率研究

通过改变电化学腐蚀电流密度的大小成功剥离了多孔硅层,并分析了多孔硅层的剥离机理,测量了多孔硅层的反射率曲线.结果表明:影响多孔硅层剥离的主要因素是多孔硅的形成临界电流密度,当电化学腐蚀的电流密度增大到100mA/cm2时,已经大于多孔硅的临界形成电流,从而发生了硅片表面的电化学抛光,并且多孔硅层对从近紫外到近红外的整个波段反射率都较低.

Investigation on Porous Silicon Layer Stripping and Reflectivity

Porous silicon layer were successfully stripped by changing current density of electrochemical corrosion,and analyzed stripping mechanics of porous silicon layer.The reflectivity curve of porous silicon layer were measured.The result showed that:the critical current density of forming porous silicon is the major factor affected porous silicon layer stripping.The surface of silicon were electrochemical polished when the electrochemical density increase up to 100mA/cm2 more than critical current density of forming porous silicon.In addition,porous silicon layer reflectivity is low from near ultraviolet to near infrared.