用光电导开关产生稳幅ps量级时间晃动超快电脉冲的研究

报道了用半绝缘GaAs光电导开关产生电压幅值稳定、ps量级时间晃动超快电脉冲的实验结果.分别用ns，ps和 fs激光脉冲触发GaAs光电导开关的结果表明，在低电场偏置下，电极间隙为1 mm的GaAs光电导开关可以产生触发时间晃动小于10 ps、电压幅值变化小于1.2 %、亚ns量级脉冲宽度的稳定超短电脉冲.分析了触发光脉冲能量起伏对光电导开关产生超快电脉冲电压幅值的影响，指出通过控制光电导开关的触发条件和对开关的优化设计，就可以获得电压幅值稳定、时间晃动在ps量级的超快电脉冲.关键词：光电导开关超快电脉冲电压幅值稳定性时间晃动

Generation of steady and jitter-free ultra-fast electrical pulses with GaAs photoconductive switches

In this paper, experiments of a lateral semi-insulating GaAs photoconductive semiconductor switch triggered by nanosecond, pico-second and femto-second laser pulses were reported. The switches was insulated by solid multi-layer transparent dielectrics. Jitter-free electrical pulse with steady voltage amplitude from the 1mm-gap GaAs switches was observed when biased with a low voltage and triggered by the serial laser pulses. Its change of amplitude was less than 1.2%, the triggered jitter-time was less than 10ps, and pulse width was up to sub-nanosecond. The effect of pulse energy change on the amplitude generated photoconductive semiconductor switch was analyzed. It was indicated that ultra-fast electrical pulse with steady voltage amplitude and pico-second triggered jitter-time can be obtained by controlling switch trigger condition and optimizing the switch design.