Influence of varying molar concentration on the properties of electrochemically-deposited zirconium-doped ZnSe thin films |
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| Authors: | Imosobomeh L. Ikhioya Agnes C. Nkele D.N. Okoli A.J. Ekpunobi Ishaq Ahmed |
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| Affiliation: | 1. Department of Physics and Astronomy, University of Nigeria, Nsukka, Enugu State, Nigeria;2. Department of Physics and Industrial Physics, Nnamdi Azikiwe University, Awka, Anambra State, Nigeria;3. Department of Physics, Colorado State University, Fort Collins, USA;4. UNESCO-UNISA Africa Chair in Nanosciences/Nanotechnology, College of Graduate Studies, University of South Africa (UNISA), Muckleneuk Ridge, P.O. Box 392, Pretoria, South Africa;5. Africa Centre of Excellence for Sustainable Power and Energy Development (ACE-SPED), University of Nigeria, Nsukka, Nigeria;6. National Centre for Physics, Quaid-i-Azam University Campus, Islamabad, 44000, Pakistan;7. NPU-NCP Joint International Research Center on Advanced Nanomaterials and Defects Engineering, Northwestern Polytechnical University, Xi''an, 710072, China |
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| Abstract: | The effects of molar concentration on ZnSe and Zr-doped ZnSe thin films were studied after successful synthesis by electrochemical technique. 0.1 M zinc tetraoxosulphate (VI) heptahydrate (ZnSO4·7H2O) and 0.1 M selenium powder respectively served as the cationic and anionic precursors while 0.1 mol% of zirconium oxidchlorid (ZrOCl2·8H2O) was used as the dopant. The morphology, structure, elemental, light response, and electrical features of the samples were studied. The films exhibited uniform distribution of spherical balls with crystalline peaks at (220), (221), (300), and (310) planes. The elemental composition of the film confirmed the deposition of as-synthesized elements. Improved optical characteristics and reduced band gap energies of the films from 2.4 eV to 2.0 eV were gotten upon the addition of zirconium. Electrical results showed increased material conductivity at increasing dopant percentages. The synthesized materials are potentially applied in optoelectronics and photovoltaics. |
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| Keywords: | ZnSe Zirconium Dopant Electrodeposition Doping Band gap energy |
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