Nanoscale effects in focused ion beam processing

Focused ion beams with diameters of 8 to 50 nm are used for material processing in the nanoscale regime. In this paper, effects of the ion beam–solid interaction determining the formation of small structures by ion-beam sputtering and chemically assisted material deposition and etching are investigated. In the case of decreasing feature size, angle-dependent sputtering, a non-constant sputter rate, and scattered ions play an important role. The impact on side-wall angle, aspect ratio, and shape of the bottom of the etched structures is discussed. In beam tail regions, these effects will be especially pronounced, leading to material swelling instead of material removal. Ion beam assisted etching and deposition will face additional effects. For small structures, gas depletion becomes a significant drawback. The impact on gas depletion and the competition with sputtering are discussed. Received: 21 August 2002 / Accepted: 21 August 2002 / Published online: 12 February 2003 RID="*" ID="*"Corresponding author. Fax: +49-9131/761360, E-mail: frey@iis-b.fhg.de