The luminescence enhancement of Eu3+ ion and SnO2 nanocrystal co-doped solben gel SiO2 films |
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| Authors: | Zhang Xiao-Wei Lin Tao Xu Jun Xu Ling Chen Kun-Ji |
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| Affiliation: | National Laboratory of Solid State Microstructures, School of Electronic Science and Engineering and School of Physics, Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials, Nanjing University, Nanjing 210093, China;National Laboratory of Solid State Microstructures, School of Electronic Science and Engineering and School of Physics, Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials, Nanjing University, Nanjing 210093, China;National Laboratory of Solid State Microstructures, School of Electronic Science and Engineering and School of Physics, Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials, Nanjing University, Nanjing 210093, China;National Laboratory of Solid State Microstructures, School of Electronic Science and Engineering and School of Physics, Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials, Nanjing University, Nanjing 210093, China;National Laboratory of Solid State Microstructures, School of Electronic Science and Engineering and School of Physics, Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials, Nanjing University, Nanjing 210093, China |
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| Abstract: | SnO2 nanocrystal and rare-earth Eu3+ ion co-doped SiO2 thin films are prepared by sol-gel and spin coating methods. The formation of tetragonal rutile structure SnO2 nanocrystals with a uniform distribution is confirmed by X-ray diffraction and transmission electron microscopy. Fourier transform infrared spectroscopy is used to investigate the densities of the hydroxyl groups, and it is found that the emission intensity from the 5D0-7F2 transitions of the Eu3+ ions is enhanced by two orders of magnitude due to energy transfer from the oxygen-vacancy-related defects of the SnO2 nanocrystals to nearby Eu3+ ions. The influences of the amounts of Sn and the post-annealing temperatures are systematically evaluated to further understand the mechanism of energy transfer. The luminescence intensity ratio of Eu3+ ions from electric dipole transition and magnetic dipole transition indicate the different probable locations of Eu3+ ions in the sol-gel thin film, which are further discussed based on temperature-dependent photoluminescence measurements. |
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| Keywords: | sol-gel processes luminescence rare-earth ions nanostructured material |
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