Room-temperature direct-bandgap photoluminescence from strain-compensated Ge/SiGe multiple quantum wells on silicon |
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Authors: | Hu Wei-Xuan Cheng Bu-Wen Xue Chun-Lai Zhang Guang-Ze Su Shao-Jian Zuo Yu-Hua Wang Qi-Ming |
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Affiliation: | State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China |
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Abstract: | Strain-compensated Ge/Si0.15Ge0.85 multiple quantum wells were grown on an Si0.1>Ge0.9 virtual substrate using ultrahigh vacuum chemical vapor deposition technology on an n+-Si(001) substrate. Photoluminescence measurements were performed at room temperature, and the quantum confinement effect of the direct-bandgap transitions of a Ge quantum well was observed, which is in good agreement with the calculated results. The luminescence mechanism was discussed by recombination rate analysis and the temperature dependence of the luminescence spectrum. |
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Keywords: | Ge multiple quantum wells strain compensated |
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