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64kB电可擦除只读存储器研究与设计
引用本文:杜支华,陶宇峰,王晓玲,陈芳.64kB电可擦除只读存储器研究与设计[J].电子与封装,2009,9(3):21-23,26.
作者姓名:杜支华  陶宇峰  王晓玲  陈芳
作者单位:中国电子科技集团公司第五十八所,江苏,无锡,214035
摘    要:文章通过对电可擦除可编程只读存储器工作原理的研究,掌握了该存储器的设计技术和工艺加工技术,特别是关键模块(如软硬件数据保护、页写、全片擦除等)的设计技术,在此基础上研制了一种存储容量为64kB的EEPROM。64kB EEPROM的特殊结构保证了电可擦除可编程存储器的高性能和可制造性;器件利用内部错误诊断来增强数据的耐久性,同时改进了数据的保存特性;同时可选择的软件数据保护机制用于预防误写入。有关方面研究工作将对后续同类产品的研制起到积极的作用。

关 键 词:EEPROM  页写  数据保护

The Study and Design on 64kB EEPROM
DU Zhi-hua,TAO Yu-feng,WANG Xiao-ling,CHEN Fang.The Study and Design on 64kB EEPROM[J].Electronics & Packaging,2009,9(3):21-23,26.
Authors:DU Zhi-hua  TAO Yu-feng  WANG Xiao-ling  CHEN Fang
Institution:DU Zhi-hua,TAO Yu-feng,WANG Xiao-ling,CHEN Fang (The 58th Institute,China Electronics Technology Group Corp,Wuxi 214035,China)
Abstract:It is very important to study the theory of memory and master the design technology of memory in IC domain. In the paper,we study the theory about EEPROM and master the design technology and fabrication technology of EEPROM. We pay attentions to the key modules’ design technology,such as SDP(Software Data Protection),HD(PHardware Data Protection),page write and so on. The SDP system is used to prevent inadvert-ent writes. A 64kB EEPROM is designed out. The special structure has been implemented on this 64kB EEPROM,which is used to assure its high performance and manufacture. By the diagnosis to internal errors,the endurance is increased. All these research jobs are useful for studying the same kind of memory in the following days.
Keywords:EEPROM
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