A method to pattern Pd over-layers on GdMg films and its application to increase the transmittance of metal hydride optical switches |
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| Authors: | R Armitage M Cich M Rubin ER Weber |
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| Institution: | (1) Department of Materials Science and Engineering, Mail Code #1760, University of California, Berkeley, CA 94720, USA, US;(2) Lawrence Berkeley National Laboratory, 1 Cyclotron Road, Berkeley, CA 94720, USA, US |
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| Abstract: | A process to pattern Pd over-layers on reactive metal films was developed using ion milling through a tungsten trioxide mask
patterned by photolithography and wet etching. The WO3 mask exhibited a low Ar+ sputter yield and, unlike conventional mask materials (SiO2, Si3N4), was easily etched in a mild alkaline solution. This procedure was applied to convert a 20-nm Pd cap over a 160-nm GdMg
film to a Pd grid with ≈9-μm-diameter openings covering ≈40% of the surface. The Pd grid proved sufficient to catalyze the
(de)hydriding reactions required to reversibly switch the GdMg film from reflecting to transparent. The maximum transmittance
of the patterned Pd/GdMg hydride bi-layer was twice that of an otherwise identical sample with a continuous Pd cap, with similar
hydriding kinetics.
Received: 2 May 2000 / Accepted: 9 May 2000 / Published online: 13 September 2000 |
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| Keywords: | PACS: 52 75 Rx 85 40 Hp 42 70 -a |
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