| 硅(100)晶面的凸角腐蚀及其补偿 |
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| 引用本文： | 周丽玲,闫卫平,梁秀萍.硅(100)晶面的凸角腐蚀及其补偿[J].微纳电子技术,2007,44(2):93-96. |
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| 作者姓名： | 周丽玲 闫卫平 梁秀萍 |
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| 作者单位： | 1. 大连理工大学电子与信息工程学院,辽宁,大连,116023
2. 大连理工大学物理系,辽宁,大连,116023 |
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| 摘 要： | 在进行Si(100)台面腐蚀时,由于硅的各向异性腐蚀特性,凸角处呈现严重切削现象。凸角侧向腐蚀程度与腐蚀深度、腐蚀温度、腐蚀剂配比等诸多因素有关。针对方形补偿结构探讨了凸角腐蚀的补偿原理,设计了补偿版图,并在KOH腐蚀液中进行实验验证,获得了与理论分析结果相一致的直角凸面补偿效果。
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| 关 键 词： | 各向异性腐蚀 凸角补偿 氢氧化钾腐蚀液 |
| 文章编号： | 1671-4776(2007)02-0093-04 |
| 修稿时间： | 2006-09-20 |
Convex Corner Undercutting and Compensation in Si (100) Wafer |
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| ZHOU Li-ling,YAN Wei-ping,LIANG Xiu-ping.Convex Corner Undercutting and Compensation in Si (100) Wafer[J].Micronanoelectronic Technology,2007,44(2):93-96. |
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| Authors: | ZHOU Li-ling YAN Wei-ping LIANG Xiu-ping |
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| Institution: | a.School of Electronic and Information Engineering; b.Department of Physics, Dalian University of Science and Technology, Dalian 116023, China |
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| Abstract: | The corner undercutting was quite serious because of the anisotropic etching on crystalline Si(100)wafer. It was relative to the etching depths,temperature and the etchant proportion and types. The principle of compensation based on square compensation structure was discussed,and the graphics of compensation was designed and experimented with KOH etchant. The compensation effect of the convex corner accorded well with the theory. |
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| Keywords: | anisotropic etching convex corner undercutting compensation KOH etchant |
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