| 一种MOSFET器件模拟的新方法 |
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| 引用本文： | 邓艳,龚仁喜,蒋超. 一种MOSFET器件模拟的新方法[J]. 宝鸡文理学院学报(自然科学版), 2004, 24(2): 137-140,143 |
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| 作者姓名： | 邓艳 龚仁喜 蒋超 |
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| 作者单位： | 广西大学,电气工程学院,广西,南宁,530004 |
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| 摘 要： | 逆算子方法是一种新发展起来求解强非线性问题的近似解析法,对这种方法在MOSFET器件模拟中的基本思想和实现方法进行了阐述,并将其运用于MOSFET器件模拟中,求解了半导体区域的一维非线性泊松方程,得到了MOSFET的一些重要参量的解析表达式,所获得的结果与数值计算的结果比较表明,该方法获得的结果物理意义明确、分析过程简单,收敛速度快捷.
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| 关 键 词： | 逆算子方法 器件模拟 泊松方程 MOSFET 器件模拟 方法 device simulation 收敛速度 过程 分析 物理意义 结果比较 数值计算 解析表达式 参量 泊松方程 非线性 一维 区域 半导体 运用 阐述 思想 |
| 文章编号： | 1007-1261(2004)02-0137-04 |
A new method of device simulation for MOSFET |
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| DENG Yan,GONG Ren-xi,JIANG Chao. A new method of device simulation for MOSFET[J]. Journal of Baoji College of Arts and Science(Natural Science Edition), 2004, 24(2): 137-140,143 |
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| Authors: | DENG Yan GONG Ren-xi JIANG Chao |
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| Abstract: | The inverse operator method is a new approximate analytical method for solving the strongly nonlinear problems. The inverse operator method was described briefly and one-dimensional MOSFET simulation was made by this method. Several analytical expressions of some important parameters were obtained by solving the nonlinear Poisson's equation in the semiconductor region. The results obtained by this method are in agreement with the results by numerical simulation, moreover, the analysis process is simple and the rapidity of convergence is satisfying. In addition, the solution form is rather clear. |
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| Keywords: | inverse operator method device simulation Poisson's equation |
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