Determination of the phase boundary of GaP using in situ high pressure and high-temperature X-ray diffraction |
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| Authors: | Shigeaki Ono Takumi Kikegawa |
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| Affiliation: | 1. Research and Development Center for Ocean Drilling Science, Japan Agency for Marine-Earth Science and Technology, Kanagawa, Japan;2. Institute of Materials Structure Science, High Energy Acceleration Research Organization, Tsukuba, Japan |
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| Abstract: | The high pressure behavior of gallium phosphide, GaP, has been examined using the synchrotron X-ray diffraction technique in a diamond anvil cell up to 27?GPa and 900?K. The transition from a semiconducting to a metallic phase was observed. This transition occurred at 22.2?GPa and room temperature, and a negative dependence of temperature of this transition was found. The transition boundary was determined to be P (GPa)?=?22.6???0.0014?×?T (K). |
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| Keywords: | Gallium phosphide high pressure X-ray diffraction phase transition |
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