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硫增感AgBrCl立方体微晶中光电子衰减行为的研究
引用本文:李晓苇,刘荣鹃,江晓利,陆晓东,赖伟东,杨少鹏,傅广生.硫增感AgBrCl立方体微晶中光电子衰减行为的研究[J].人工晶体学报,2004,33(5):784-787.
作者姓名:李晓苇  刘荣鹃  江晓利  陆晓东  赖伟东  杨少鹏  傅广生
作者单位:河北大学物理科学与技术学院,保定,071002
基金项目:教育部重点科研项目(No.01011) 河北省自然科学基金(No.103097)资助项目
摘    要:利用微波吸收相敏检测技术并结合短脉冲激光曝光,测量了硫增感条件下AgBrCl立方体微晶感光材料的光电子时间衰减谱.分析了光电子一级衰减区域与增感温度的关系,确定了硫增感的陷阱效应对光电子衰减时间和光电子不同一级衰减区域的影响,并获得了增感过程中生成浅电子陷阱效果的最佳增感条件.

关 键 词:卤化银微晶  硫增感  光电子  电子陷阱  光学微波双共振技术  
文章编号:1000-985X(2004)05-0784-04

Study of the Photoelectron Decay Behavior in Sulfur-sensitized AgBrCl Cubic Microcrystal
LI Xiao-wei,LIU Rong-juan,JIANG Xiao-li,LU Xiao-dong,LAI Wei-dong,YANG Shao-peng,FU Guang-sheng.Study of the Photoelectron Decay Behavior in Sulfur-sensitized AgBrCl Cubic Microcrystal[J].Journal of Synthetic Crystals,2004,33(5):784-787.
Authors:LI Xiao-wei  LIU Rong-juan  JIANG Xiao-li  LU Xiao-dong  LAI Wei-dong  YANG Shao-peng  FU Guang-sheng
Abstract:The time spectrum of the photoelectron decay in the sulfur-sensitized AgBrCl microcrystal was measured by combining microwave absorption dielectric spectrum technique with short pulse laser exposure. The relation between the first-order decay section of photoelectron and the sensitized temperature was analyzed. The influence of trap effect resulting from sulfur sensitization on the different first order-decay section of the photoelectron decay time was determined. The sensitization condition of the optimal shallow electron trap effect is obtained.
Keywords:silver halide microcrystal  sulfur sensitization  photoelectron  electron trap  optical microwave double resonance technique
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