808 nm高占空比大功率半导体激光器阵列

采用渐变折射率分别限制单量子阱宽波导结构，通过降低非辐射复合、有源层载流子泄露、散射和吸收损耗来提高出射效率和降低激光阈值电流，从而提高半导体激光器阵列的输出功率；同时使P面具有更高的粒子掺杂数密度，优化N面合金条件，降低半导体激光器的串联电阻，降低焦耳热，提高了半导体激光器阵列的转换效率。利用金属有机化学气相淀积技术生长GaInAsP/InGaP/AlGaAs渐变折射率分别限制单量子阱宽波导结构激光器材料,利用该材料制成半导体激光线阵列在20%高占空比的输入电流下，半导体激光器的输出峰值功率达到189.64 W(180 A)，斜率效率为1.1 W/A，中心波长为805.0 nm，阈值电流为7.6 A，电光转换效率最高可达55.4%；在1%占空比的输入电流下，阵列的输出峰值功率可达324.9 W(300 A)，斜率效率为1.11 W/A，阈值电流为7.8 A，电光转化效率最高达55.6%，中心波长为804.5 nm。

High power high duty-cycle 808 nm wavelength laser diode

808 nm high duty-cycle high power semiconductor laser array was studied. Gradient refraction index separate confinement hetero-structure single quantum well broad waveguide structure(GRIN-SCH-SQW-BW) was adopted to reduce the non-radiation compound, the active layer carrier leakage, and the scattering and absorption loss. Meanwhile, it enables high doping of the P side and optimization of N side alloy conditions, which reduce the laser diode series resistance, thereby reduce the joule heat and raise the output power of the laser diode. GaInAsP/InGaP/AlGaAs GRIN-SCH-SQW-BW epilayers were grown by low pressure metal organic chemical vapor deposition(MOCVD) on N-type GaAs substrate, laser diode array was fabricated using the material. The output power of laser diode array is up to 189.64 W at 180 A and 20% duty cycle, the slope efficiency is as high as 1.1 W/A, the central wavelength is 805.0 nm and the highest wall plug efficiency is 55.4%; the output power of laser diode array is up to 324.9 W at 300 A and 1% duty cycle, the slope efficiency is as high as 1.11 W/A, the central wavelength is 804.5 nm and the highest wall plug efficiency is 55.6%.