| 掺杂氧的Ge-Sb-Te相变薄膜的光学性质 |
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| 引用本文： | 顾四朋,侯立松,刘波,陈静.掺杂氧的Ge-Sb-Te相变薄膜的光学性质[J].光学学报,2002,22(9):137-1140. |
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| 作者姓名： | 顾四朋 侯立松 刘波 陈静 |
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| 作者单位： | 1. 中国科学院上海光学精密机械研究所,上海,201800
2. 国家红外物理实验室,中国科学院上海技术物理所,上海,200083 |
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| 基金项目： | 国家自然科学基金 (5 9832 0 6 0 )资助课题 |
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| 摘 要： | 研究了氧掺入Ge-Sb-Te射频溅射相变薄膜在400nm-800nm区域的光学常数（n,k）和反射、透射光谱，发现适当的氧掺入能大大增加退火前后反射率对比度，因此可通过氧掺入改良Ge-Sb-Te相变材料的光存储性能。
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| 关 键 词： | 相变薄膜 Ge－Sb－Te薄膜 氧掺杂 光学性质 光存储 |
| 收稿时间： | 2001/10/11 |
Optical Properties of Oxygen-Doped Ge-Sb-Te Phase-Change Films |
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| Gu Sipeng,Hou Lisong,Liu Bo.Optical Properties of Oxygen-Doped Ge-Sb-Te Phase-Change Films[J].Acta Optica Sinica,2002,22(9):137-1140. |
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| Authors: | Gu Sipeng Hou Lisong Liu Bo |
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| Abstract: | Optical properties of monolayer oxygen-doped Ge-Sb-Te thin films prepared by RF-sputtering method were studied in the region of 400 nm～800 nm, including refractive index, extinction coefficient, reflection and transmission spectra. The results indicated that larger reflectivity contrast can be achieved by appropriate doping of oxygen, thus the recording properties of the Ge-Sb-Te film material can be improved by the oxygen-doping. |
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| Keywords: | Ge-Sb-Te films oxygen-doping optical properties optical storage |
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