Characterization of ion-implanted silicion by Rutherford backscattering spectrometry and ellipsometry

It is demonstrated that the information obtained by Rutherford backscattering spectrometry and channeling technique can substantially help in the construction of a realistic optical model for the ellipsometry of ion-implanted silicon. In the case of fully amorphous ion-bombarded layers, the ellipsometry is a fast, non-destructive and contactless method to estimate the thickness of these films. For buried and partially disordered layers a qualitative interpretation of different trajectories in the - plance can be given on the basis of channeling measurements.