Conversion of two types of bipolar switching induced by the electroforming polarity in Au/NiO/SrTiO3/Pt memory cells |
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| Authors: | Xianwen Sun Linghong Ding Guoqiang Li Weifeng Zhang |
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| Affiliation: | 1. Key Laboratory of Photovoltaic Materials of Henan Province and School of Physics and Electronics, Henan University, Kaifeng, 475004, P.R. China
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| Abstract: | The resistive switching characteristics of Au/p-NiO/n-SrTiO3(STO)/Pt memory cells are investigated. Two types of bipolar switching with opposite polarity coexist in the cell and can be repeatedly adjusted by the electroforming polarity. The conduction mechanisms of low resistance and high resistance states are dominated by electron tunneling and interface barrier effect, respectively. The impact of electroforming polarity on the switching mechanism and the distribution of defects are discussed. The results indicate that these two types of switching originate from a variation of interface barrier respectively at the NiO/STO p–n junction and STO/Pt Schottky contact. |
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