InxGa1-xAs-AlyGa1-yAs-GaAs strained-layer quantum-well heterostructure circular ringlasers

The growth, processing, and optical characterization of a single Y-junction In_xGa_1-xAs-Al_yGa_1-y As-GaAs strained-layer quantum-well heterostructure circular ring laser (6 μm width, 11~251 μm outer radius) are described. The circular ring lasers have been grown by metalorganic chemical vapor deposition, etched by SiCl₄ reactive ion etching, and planarized by polyimide. The dependences of laser threshold current density and peak emission wavelength (950~1015 nm) on outer radius are presented. The emission spectra show that the circular ring lasers lase mainly in high-order whispering gallery modes, with smaller outer radius ring lasers operating in low-order whispering gallery modes