InGaAsP/InP双异质结发光管退化特性的研究

在室温(15～35℃),大气气氛中研究了InGaAsP/InP双异质结发光二极管的退化特性。有二种慢退化类型,连续工作104小时后,InGaAsP/InP发光二极管的电学参数、光学参数(除原有暗结构的B型慢退化器件,老化初期光功率下降10～20%外)均无明显变化。用红外电视选行扫描仪观察了老化过程中发光区的EL图象。研究了该器件的退化特性与EL图象的变化规律,找出了它们的对应关系。用扩展缺陷模型解释了InGaAsP/InP双异质结发光管的退化机理。

THE STUDY OF DEGRADATION CHARACTERISTICS FOR THE inGaAsP/InP DOUBLE HETEROJUNCTION LIGHT EMITTING DIODES

In this report, the degradation characteristics of the InGaAsP/InP DH LED’s has been investigated at room temperature (15-35℃) in atmosphere ambient. Two type slow degradation of A and B was suggested. The characteristics of the output power-current, emission spectrum, thermal resistances and series resistance was observed. Tt is found that no change of these characteristics of the InGaAsP/InP DH LED’s undegoes after 104 hours cw operation, except slow degradation for B type the normalized output power value P/P0 decrease slightly about 10-20% at the beginning ageing test.An electroluminescence pattern was observed by means of infrared TV and germanimum photodiode was used as a detector. It is fcund fcr the slow degradation of A type there is no the EL pattern change after 104 hours cw operation, but for B type slow degradation with initial dark structure, there is no distingushing variation during EL pattern experiment after 8×103 hours cw operation.We explained the degradation mechanism of the InGaAsP/InP DH LED’s by extendng defect model.