Determination of the disorder profile in an ion‐implanted silicon carbide single crystal by Raman spectroscopy

Silicon carbide is an interesting material for GEN IV fission reactor projects because of its excellent properties. However, these properties will be altered under extreme conditions such as irradiation because of accumulation of damage. Mechanisms playing a role in defect formation require further studies in the case of high energy heavy ion irradiations. In this work a silicon carbide single crystal slice has been implanted with 20 MeV Au ions and probed by using Raman spectrometry. The resulting Raman spectra recorded as a function of depth clearly show a damaged zone, in which the width is in agreement with the projected range of the incident ions (R_p) calculated by using SRIM code. In this area, three damaged zones have been brought to light because of the high spatial resolution of the Raman spectrometry technique. The existence of these zones is discussed with regard to the different energy loss regimes of the implanted ions such as the electronic and nuclear ones. Copyright © 2012 John Wiley & Sons, Ltd.