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Potential induced tuning of the luminescence of porous silicon: A simultaneous study of electroluminescence and photoluminescence emission
Affiliation:1. School of Chemistry, University of Bath, Bath BA2 7AY,UK;2. School of Chemistry, University of Bristol, Bristol BS8 1TS, UK;3. School of Physics, University of Bath, Bath BA2 7AY, UK;1. Key Laboratory of Luminescence and Optical Information, Ministry of Education, School of Science, Beijing Jiaotong University, Beijing, 100044, China;2. Department of Chemistry, Technical University of Munich, D-85747, Garching, Germany;1. Collaborative Innovation Center of Sustainable Energy Materials, Guangxi Key Laboratory of Electrochemical Energy Materials, State Key Laboratory of Processing for Non-ferrous Metal and Featured Materials, Guangxi University, Nanning, 530004, China;2. School of Chemistry and Chemical Engineering, Shihezi University, Shihezi, 832003, Xinjiang Bingtuan, China;3. National Energy Center for Coal to Liquids, Synfuels CHINA Co., Ltd., Huairou District, Beijing, 101407, China;1. State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China (UESTC), Chengdu, 610054, China;4. Department of Electrical Engineering, University of South Africa, Pretoria 0001, South Africa
Abstract:The voltage dependence of light emission from illuminated porous silicon samples immersed in solutions containing persulfate anions was studied. It is reported that the signal obtained is not simply the sum of the individual photoluminescence and electroluminescence signals. The ‘cross-talk’ observed is discussed in terms of a previously proposed mechanism of photoluminescence and electroluminescence potential tuning. It is shown that a mechanism involving radiative quenching by an Auger process is consistent with the results obtained.
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