| Abstract: | The propagation of defect networks in failed 980 nm emitting high‐power diode lasers is analyzed. This is accomplished ex post facto by electron‐beam based techniques applied without device preparation and in situ by thermographic microscopy with 1 µs time resolution. Moreover, an iterative model is established, which allows for describing both the shape of the observed defect networks as well as the kinetics of their spread. This concerted approach allows the clear assignment of starting points of extended defect systems as well as analysis of their evolution kinetics. Eventually this knowledge may help in making devices more resistive against defect creation and extension. |
