On the recombination behaviour of iron in moderately boron-doped p-type silicon |
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Authors: | D. Walz J. -P. My G. Kamarinos |
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Affiliation: | (1) LETI (CEA-Technologies Avancées) MEL-CENG, 17 rue des Martyrs, F-38054 Grenoble Cedex 9, France;(2) LPCS-ENSERG, 23 rue des Martyrs, F-38016 Grenoble Cedex 1, France |
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Abstract: | The recombination lifetime and diffusion length of intentionally iron-contaminated samples were measured by the Surface Photo Voltage (SPV) and the Elymat technique. The lifetime results from these techniques for intentionally iron-contaminated samples were analysed, in particular for the aspect of the injection-level dependency of recombination lifetime. Based on theoretical considerations, a method for the analysis of deep-level parameters combining constant photon flux SPV and Elymat measurements has been developed. This method is based on a detailed numerical analysis of the Elymat technique, including the Dember electric field, the characteristics of the laser beam, the transport parameters of the semiconductor and multilevel Shockley-Read-Hall (SRH) recombination kinetics. The results of the numerical simulation are applied to the analysis of recombination lifetime measurements on intentionally iron-contaminated samples. We compared numerical simulations and experimental results from SPV and Elymat for p-type samples using the classical acceptor level atEv +0.1 eV and the donor level of FeB pairs atEc -0.3 eV as recombination centre. Better consistency in the interpretation of the results has been found in the doping range 1014–1016 cm–3 supposing theEc -0.3 eV level as predominant recombination centre. An attempt to extract the electron and hole capture cross-sections for this defect is made. |
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Keywords: | 61.70 72.20 72.40 |
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