| 利用限制扩散湿法刻蚀法制作GaAs微透镜 |
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| 引用本文： | 王贞福,宁永强,张岩,史晶晶,李特,崔锦江,刘光裕,张星,秦莉,刘云,王立军.利用限制扩散湿法刻蚀法制作GaAs微透镜[J].光电子．激光,2009(6):709-712. |
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| 作者姓名： | 王贞福 宁永强 张岩 史晶晶 李特 崔锦江 刘光裕 张星 秦莉 刘云 王立军 |
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| 作者单位： | 中国科学院长春光学精密机械与物理研究所激发态物理重点实验室;中国科学院研究生院; |
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| 基金项目： | 国家自然科学基金资助项目(60636020,60676034,60476029,60577003,60876036,60706007) |
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| 摘 要： | 采用微透镜作为输出耦合镜,与垂直腔面发射激光器(VCSEL)的p-DBR和n-DBR构成复合腔,可以获得大功率单横模激光输出,改善光束质量。在GaAs衬底上采用限制扩散湿法刻蚀技术制作出不同直径的微透镜,研究了微透镜形成的基本原理、工艺流程,通过控制腐蚀的时间和腐蚀溶液的配比度,得到了不同曲率半径的微透镜,并且对微透镜表面形貌进行了研究。
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| 关 键 词： | 微透镜 单横模 限制扩散湿法刻蚀 GaAs |
Fabrication of GaAs-microlens by using diffusion-limited wet etching |
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| WANG Zhen-fu,NING Yong-qiang,ZHANG Yan,SHI Jing-jing,LI Te,CUI Jin-jiang,LIU Guang-yu,ZHANG Xing,QIN Li,LIU Yun,WANG Li-jun.Fabrication of GaAs-microlens by using diffusion-limited wet etching[J].Journal of Optoelectronics·laser,2009(6):709-712. |
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| Authors: | WANG Zhen-fu NING Yong-qiang ZHANG Yan SHI Jing-jing LI Te CUI Jin-jiang LIU Guang-yu ZHANG Xing QIN Li LIU Yun WANG Li-jun |
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| Institution: | 1.Laboratory of Excited State Processes;Chinese Academy of Science;Changchun Institute of Optics;Fine Mechanics and Physics;Changchun 130033;2.Graduate School of the Chinese Academy of Science;Beijing 100039 |
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| Abstract: | Microlens can be used to realize high power and single transverse mode by forming a compound cavity with p-DBR and n-DBR of the vertical cavity surface emitting laser(VCSEL) chip.Microlenses with different diameters are fabricated on the n-side of the VCSEL wafer by using diffusion-limited wet etching.With the diameter of 600 μm,the roughness of the lens surface is 15.55 nm,the curvature radius is 959.66 μm,the focal length is 369.1 μm.With the smaller diameter of 200 μm,the roughness of the lens surface is 12.56 nm,the curvature radius is 959.86 μm,the focal length is 369.18 μm.The solution ratio of HBr,H2O2,H2O is the major factor to impact the etching rate.Also the temperature of environment is the important factor to form the smooth surface of lens. |
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| Keywords: | microlens single transverse mode diffusion-limited wet etching GaAs |
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