Resistance switching properties of In2O3 nanocrystals memory device with organic and inorganic hybrid structure |
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Authors: | Lee Dong Uk Kim Eun Kyu Cho Won-Ju Kim Young-Ho |
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Institution: | (1) Department of Electronic Materials Engineering, Kwangwoon University, Seoul, 139-701, South Korea;(2) Department of Physics, Hanyang University, Seoul, 133-791, South Korea |
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Abstract: | A memory device with In2O3 nanocrystals embedded in a biphenyl-tertracarboxylic dianhydride-phenylen diamine (BPDA-PDA) polyimide layer on a ZnO layer
was fabricated, and its electrical properties were evaluated. Then, the transmittance efficiency in the structure of the BPDA-PDA
polyimide/In2O3 nanocrystals/ZnO/ITO/double polishing sapphire substrate was measured to be about 80% between 440 to 800 nm by ultraviolet-visible
transmittance spectroscopy. A bipolar switching current bistability by difference resistance appeared in the sweep voltage
rage from −7 to 7 V. It was considered that the bipolar behavior of current-voltage may originate from a resistance fluctuation
because of the electron charging effect in In2O3 nanocrystals by voltage sweeping, Fowler–Nordheim tunneling, space-charge-limited current, and the migration of O2− ions. |
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