Resistance switching effect in LaAlO3/Nb-doped SrTiO3 heterostructure

The authors report on the fabrication and electronic transport property of LaAlO₃/Nb-doped SrTiO₃ heterostructure. The current–voltage curves of this heterostructure show hysteresis and a remarkable resistance switching behavior, which increase dramatically with decreasing temperature. Multiresistance states were realized by voltage pulses with different amplitudes and polarities and the ratio of the electrical pulse induced resistance change is larger than 10⁴. More interestingly, the relaxation of junction current after switching follows the Curie–von Schweidler law J∝t ⁻ⁿ with an exponential increase of n with temperature. The results were discussed in terms of the trap-controlled space charge limited conduction process via defects near the interface of the heterostructure.