Laser annealing of GaAs dual implanted with Si and P ions |
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| Authors: | V Rybka V Odzhayev J ?ervená V Hnatowicz J Kvítek H Jelínková |
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| Institution: | (1) Institute of Chemical Technology, CS-166 28 Prague 6, Czechoslovakia;(2) Faculty of Physics, Belorussian State University, SU-220 080 Minsk, USSR;(3) Nuclear Physics Institute, Czechosl. Acad. Sci., CS-250 68  e , Czechoslovakia;(4) Faculty of Nuclear and Physical Engineering, Czech Technical University, CS-180 00 Prague, Czechoslovakia |
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| Abstract: | Laser annealing of SI(100) GaAs:Cr implanted either with Si+ ions (150 keV, 6×1013-1×1015cm–2) or dual implanted with Si+ ions (150 keV, 6×1014–1×1015cm–2) and P+ ions (160 keV, 1×1014–1×1015cm–2) has been examined using backscatteringchannelling technique and via electrical measurement of Hall effect. It has been found that at laser energy densities  0·8 J cm–2 a full recovery of the sample surface occurs. In dual implanted samples (1×1015 Si+ cm–2+1×1015P+cm–2) up to 46% of Si atoms become electrically active after the laser annealing. Resultant Hall mobility of carriers is, however,lower than that obtained after common thermal annealing.The authors are pleased to take the opportunity of thanking Professor M. Kubát for his encouragement and continuous support. Accelerator staff is gratefully acknowledged for its assistance in the course of experiments. |
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