首页 | 本学科首页   官方微博 | 高级检索  
     检索      


Conductivity and persistent photoconductivity in GaAs epitaxial films containing single and double delta-doped layers
Authors:V V Valyaev  V L Gurtovoi  D Yu Ivanov  S V Morozov  V V Sirotkin  Yu V Dubrovskii  S Yu Shapoval  Yu N Khanin  E E Vdovin  A N Pustovit
Institution:(1) Institute for Problems of Microelectronics and High-Purity Materials, Russian Academy of Sciences, 142432 Chernogolovka, Moscow Region, Russia
Abstract:Electrophysical parameters of single and double delta-doped layers in GaAs epitaxial films grown by the metal-organic chemical vapor deposition have been systematically investigated in the temperature range of 4.2 to 300 K. The 2D electron gas density distribution is affected by the overlap of wave functions in neighboring quantum wells, as a result of which the peak on the curve of the Hall mobility in the 2D electron gas versus the separation between the quantum wells shifts. The persistent photoconductivity in delta-doped layers is due to the change in the surface potential caused by the neutralization of the negative charge of surface states by photoexcited holes. A method for comparing delta-doped layers grown under different conditions at different depths from the sample surface has been suggested. Zh. éksp. Teor. Fiz. 113, 693–702 (February 1998)
Keywords:
本文献已被 SpringerLink 等数据库收录!
设为首页 | 免责声明 | 关于勤云 | 加入收藏

Copyright©北京勤云科技发展有限公司  京ICP备09084417号