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不同浓度Er掺杂Si纳米晶粒电子结构和光学性质的第一性原理研究
引用本文:王英龙,王秀丽,梁伟华,郭建新,丁学成,褚立志,邓泽超,傅广生.不同浓度Er掺杂Si纳米晶粒电子结构和光学性质的第一性原理研究[J].物理学报,2011,60(12):127302-127302.
作者姓名:王英龙  王秀丽  梁伟华  郭建新  丁学成  褚立志  邓泽超  傅广生
作者单位:河北大学物理科学与技术学院,保定 071002
基金项目:国家自然科学基金(批准号:10774036)、河北省自然科学基金(批准号:E2008000631,E2011201134)、河北省光电材料重点实验室和河北大学自然科学基金资助的课题.
摘    要:利用基于密度泛函理论的第一性原理,对不同浓度Er掺杂Si纳米晶粒的结构稳定性、电子和光学性质进行了研究.结果表明: Si纳米晶粒中Er掺杂浓度越低,结构越稳定;Er掺杂后的Si纳米晶粒引入了杂质能级,导致禁带宽度变窄;掺杂后的Si纳米晶粒在低能区出现了一个较强的吸收峰,随着浓度的降低,吸收峰峰值逐渐减小,甚至消失. 这为Si基发光材料的设计提供了理论依据. 关键词: Si纳米晶粒 掺杂 电子结构 光学性质

关 键 词:Si纳米晶粒  掺杂  电子结构  光学性质
收稿时间:2011-02-23

First principles study of electronic and optical properties of Er-doped silicon nanoparticles with different densities
Wang Ying-Long,Wang Xiu-Li,Liang Wei-Hu,Guo Jian-Xin,Ding Xue-Cheng,Chu Li-Zhi,Deng Ze-Chao and Fu Guang-Sheng.First principles study of electronic and optical properties of Er-doped silicon nanoparticles with different densities[J].Acta Physica Sinica,2011,60(12):127302-127302.
Authors:Wang Ying-Long  Wang Xiu-Li  Liang Wei-Hu  Guo Jian-Xin  Ding Xue-Cheng  Chu Li-Zhi  Deng Ze-Chao and Fu Guang-Sheng
Institution:College of Physics Science and Technology, Hebei University, Baoding 071002, China;College of Physics Science and Technology, Hebei University, Baoding 071002, China;College of Physics Science and Technology, Hebei University, Baoding 071002, China;College of Physics Science and Technology, Hebei University, Baoding 071002, China;College of Physics Science and Technology, Hebei University, Baoding 071002, China;College of Physics Science and Technology, Hebei University, Baoding 071002, China;College of Physics Science and Technology, Hebei University, Baoding 071002, China;College of Physics Science and Technology, Hebei University, Baoding 071002, China
Abstract:The structural stability, the electronic and the optical properties of Er-doped silicon nanoparticles are investigated by first principles based on the density functional theory. The results show that the structure is more stable when the doping concentration of Er atoms is smaller in silicon nanoparticles. The doping of Er atom in silicon nanoparticle introduces the impurity levels which result in the narrowing of band gap. A strong absorption peak occurs in the low-energy region of Er-doped silicon nanoparticles, and the intensity of the absorption peak decreases gradually, even disappears with doping concentration decreasing. The study provides the theoretical basis for the design of silicon-based materials.
Keywords:silicon nanoparticles  doping  electronic structure  optical properties
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