Diode-pumped Nd:LGS laser emitting at 888 nm |
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Authors: | S. T. Li Y. Dong C. Wang B. Z. Li |
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Affiliation: | 1.School of Science,Changchun University of Science and Technology,Changchun,China |
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Abstract: | We present what is, to the best of our knowledge, the first diode-pumped Nd:La3Ga5SiO14 (Nd:LGS) laser emitting at 888 nm, based on the 4 F 3/2-4 I 9/2 transition, generally used for a 904 nm emission. The use of a pump module with 16 passes through the crystal allowed the realization of a Nd:LGS thin-disk laser with 1.41 W of continuous wave (cw) output power at 888 nm. Moreover, intracavity second-harmonic generation (SHG) in cw mode has also been demonstrated with a power of 221 mW at 444 nm by using a BiB3O6 (BiBO) nonlinear crystal. |
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