| 表面等离子激元调制的亚波长束斑半导体激光器 |
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| 引用本文： | 宋国峰,汪卫敏,蔡利康,郭宝山,王青,徐云,韦欣,刘运涛. 表面等离子激元调制的亚波长束斑半导体激光器[J]. 物理学报, 2010, 59(7): 5105-5109 |
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| 作者姓名： | 宋国峰 汪卫敏 蔡利康 郭宝山 王青 徐云 韦欣 刘运涛 |
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| 作者单位： | 中国科学院半导体研究所纳米光电子实验室,北京,100083 |
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| 基金项目： | 国家自然科学基金(批准号:60876049, 60906028)资助的课题. |
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| 摘 要： | 近场有源探针可以解决近场光学扫描显微镜等应用中对高亮度和高光功率的需求.提出一种制备具有表面等离子激元结构的微纳束斑的半导体激光器的设计方案.模拟分析表明,此激光器在3.5 μm的远场仍然可以获得小于波长的束斑,并且其输出功率密度与没有表面激元结构的激光器比较提高近30倍.
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| 关 键 词： | 表面等离子激元 半导体激光器 有源探针 |
| 收稿时间： | 2009-09-29 |
Sub-wavelength beam lasers with surface plasmon structures |
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| Song Guo-Feng,Wang Wei-Min,Cai Li-Kang,Guo Bao-Shan,Wang Qing,Xu Yun,Wei Xin,Liu Yun-Tao. Sub-wavelength beam lasers with surface plasmon structures[J]. Acta Physica Sinica, 2010, 59(7): 5105-5109 |
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| Authors: | Song Guo-Feng Wang Wei-Min Cai Li-Kang Guo Bao-Shan Wang Qing Xu Yun Wei Xin Liu Yun-Tao |
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| Affiliation: | Nano-Optoelectronics Laboratory, Institute of Semiconductor, Chinese Academy of Sciences, Beijing 100083, China;Nano-Optoelectronics Laboratory, Institute of Semiconductor, Chinese Academy of Sciences, Beijing 100083, China;Nano-Optoelectronics Laboratory, Institute of Semiconductor, Chinese Academy of Sciences, Beijing 100083, China;Nano-Optoelectronics Laboratory, Institute of Semiconductor, Chinese Academy of Sciences, Beijing 100083, China;Nano-Optoelectronics Laboratory, Institute of Semiconductor, Chinese Academy of Sciences, Beijing 100083, China;Nano-Optoelectronics Laboratory, Institute of Semiconductor, Chinese Academy of Sciences, Beijing 100083, China;Nano-Optoelectronics Laboratory, Institute of Semiconductor, Chinese Academy of Sciences, Beijing 100083, China;Nano-Optoelectronics Laboratory, Institute of Semiconductor, Chinese Academy of Sciences, Beijing 100083, China |
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| Abstract: | The simulation of a plasmonic very-small-aperture laser is demonstrated in this paper. It is an integration of the surface plasmon structure and very-small-aperture laser (VSAL). The numerical results demonstrate that the transmission field can be confined to a spot with subwavelength width in the far field (3.5 μm far from the emitting surface), and the output power density can be enhanced over 30 times of the normal VSAL. Such a device can be useful in the application of a high resolution far-field scanning optical microscope. |
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| Keywords: | surface plasmon very-small-aperture lasers laser probe |
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