Enhancement of optical switching parameter and third-order optical nonlinearities in embedded Si nanocrystals: A theoretical assessment |
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| Authors: | Hasan Yıldırım Ceyhun Bulutay |
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| Institution: | 1. Department of Electronics Engineering, Catholic University of Daegu, Hayang-rho 13-13, Kyeongsan, Kyeongbuk 38430, South Korea;2. Department of Electrical and Computer Engineering, University of Seoul, 90 Jeonnong, Tongdaimoon-Gu, Seoul 130-743, South Korea;1. School of Physics and Engineering, Sun Yat-sen University, 510275 Guangzhou, China;2. School of Engineering, Sun Yat-sen University, 510275 Guangzhou, China;1. Faculty of Physics, University of Tabriz, Tabriz, Iran;2. Science and Research branch, Islamic Azad University, Tabriz, Iran;3. Department of Physics, Azarbaijan Shahid Madani University, Tabriz, Iran;4. Department of Physics, East Azarbaijan, Science and Research Group of Processing and Communication, Azarbaijan Shahid Madani University, Tabriz, Iran;1. State Key Laboratory of Optoelectronic Materials and Technologies, School of Physics and Engineering, Sun Yet-Sen University, Guangzhou 510275, China;2. Department of Physics, Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong |
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| Abstract: | Third-order bound-charge electronic nonlinearities of Si nanocrystals (NCs) embedded in a wide band-gap matrix representing silica are theoretically studied using an atomistic pseudopotential approach. Nonlinear refractive index, two-photon absorption and optical switching parameter are examined from small clusters to NCs up to a size of 3 nm. Compared to bulk values, Si NCs show higher third-order optical nonlinearities and much wider two-photon absorption-free energy gap which gives rise to enhancement in the optical switching parameter. |
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