| Institution: | 1. Département d’Optique P.M. Duffieux, Institut FEMTO-ST, Université de Franche-Comté, CNRS UMR 6174, F-25030 Besançon Cedex, France;2. Service d’Electromagnétisme et de Télécommunications, Faculté Polytechnique de Mons, 31 Boulevard Dolez, B-7000 Mons, Belgium;3. Ioffe Physico-Technical Institute of Russian Academy of Sciences, 194021 Saint Petersburg, Russia;1. Key Laboratory of Materials for High Power Laser, Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, Shanghai 201800, PR China;2. University of Chinese Academy of Sciences, Beijing 100039, PR China;1. College of Physics and Electronic Information, Gannan Normal University, Ganzhou 341000, Jiangxi, China;2. School of Mechanical Engineering and Electronic Information, China University of Geosciences, Wuhan 430074, China;1. Department of Physics, Pondicherry University, Puducherry 605 014, India;2. Department of Physics, Central University of Tamil Nadu, Thiruvarur, India;1. Department of Physics, Ben-Gurion University of the Negev, P.O. Box 653, Be''er Sheva 84105, Israel;2. Ioffe Physical-Technical Institute, Polytechnicheskaya 26, St. Petersburg 194021, Russia;3. Department of Chemical Science and Technology, Hosei University, 3-7-2, Kajino, Koganei, Tokyo, 184-8584, Japan |
