Ab initio study of aluminum chemical vapor deposition from dimethylaluminum hydride: a gas phase reaction mechanism |
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Authors: | T Nakajima and K Yamashita |
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Institution: | Department of Chemical System Engineering, Graduate School of Engineering, The University of Tokyo, Tokyo 113-8656, Japan |
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Abstract: | The effect of preheating of dimethylaluminum hydride (DMAH) as a gas on the epitaxial growth in aluminum chemical vapor deposition (Al-CVD) is studied theoretically. The chemical changes of DMAH in the gas phase such as unimolecular decomposition reactions, bimolecular reactions and polymerizations are treated using ab initio molecular orbital method (MP2/6-31G**) and density functional theory (B3P86/LanL2DZ). The gas phase equilibrium composed of the previous reaction products under the usual experimental conditions for Al-CVD is also investigated in detail as the initial stage of the CVD process. From the energetics point of view, unimolecular decomposition reactions and bimolecular reactions hardly occur, however, polymerizations of DMAH take place readily at the low temperatures found in Al-CVD. A large amount of DMAH-dimer and a small amount of DMAH-monomer and trimer coexist in the equilibrium state. |
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Keywords: | Dimethylaluminum hydride Large scale integrated Chemical vapor deposition |
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