PT/PZT/PT铁电薄膜的铁电畴和畴壁

用sol-gel法制备出了具有良好铁电性、纯钙钛矿结构的PbTiO₃/Pb(Zr_0.3Ti_0.7)O₃/PbTiO₃(PT/PZT/PT)新型夹心结构铁电薄膜.用扫描力显微镜(SFM)的压电响应模式获得了薄膜铁电畴的垂直于膜平面方向(OPP)、膜平面内(IPP)及OPP的相位和幅度图像，结合理论分析指出薄膜的电畴主要由c畴和偏离垂直于膜平面方向上的c畴构成，薄膜取向的复杂性导致了复杂的畴结构.对于［111］取向的薄膜，当偏离垂直于膜平面方向上的c畴在垂直膜平面方向和面内方向都相反时构成180°的畴壁，在垂直膜平面方向上相同、面内方向相反或由垂直膜平面方向上相反、面内方向相同时构成90°畴壁.关键词：铁电薄膜PT/PZT/PT电畴和畴壁扫描力显微镜(SFM)

The domain and domain wall structure of PT/PZT/PT ferroelectric thin film

The polycrystalline perovskite-phase PT/PZT/PT ferroelectric thin film was prepared by sol-gel method. The domain and domain wall structures were investigated by scanning force microscopy. The out-of-plane polarization(OPP), in-plane polarization(IPP), the OPP amplitude and OPP phase images were obtained. The domain of the film has a complex structure with c-domain and deviated-c-domain the direction of which deviated from the surface normal of the film. The complex domain structure is related to the orientation of the crystal grains in the film. For the［111］oriented films, the 180° domain wall is formed when deviated-c-domains have reverse directions in OPP and IPP. The 90° domain wall is formed when the domains have the same direction in OPP and reverse directions in IPP, or when they have reverse directions in OPP and same direction in IPP.