A simplified post-soft-breakdown current model for MOS devices |
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Authors: | Manoj Kumar Jyoti Prakash Kar In-Soo Kim Se-Young Choi and Jae-Min Myoung |
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Institution: | (1) Department of Electronic Science and Technology, Huazhong University of Science and Technology, Wuhan, 430074, People’s Republic of China;(2) Department of Electrical and Electronic Engineering, University of Hong Kong, Pokfulam Road, Hong Kong, Hong Kong |
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Abstract: | Based on the tunneling current model, a simplified current model is developed for MOS devices after soft breakdown (SBD).
The post-soft-breakdown current consists of modified direct tunneling current and Fowler Nordheim (FN) tunneling current.
Considering the change of gate oxide after soft breakdown, impacts of soft breakdown on the dielectric constant, and effective
electron mass of the gate oxide are discussed, and their values are obtained by fitting simulation results to experimental
data. It is found that the effective electron mass is decreased after soft breakdown due to damaged oxide, while the dielectric
constant is increased after soft breakdown due to interface distortion. In this way, the leakage current after soft breakdown
can be accurately calculated. The validity of the proposed model is confirmed by experimental results.
Z.L. Li currently is with the Department of Electrical and Electronic Engineering, University of Hong Kong. |
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Keywords: | PACS" target="_blank">PACS 73 40 Sx 77 22 Jp 85 30 De |
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