Low pressure metalorganic chemical vapor deposition of InP and related compounds |
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Authors: | M Razeghi M A Poisson J P Larivain J P Duchemin |
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Institution: | (1) THOMSON-CSF-DOMAINE DE CORBEVILLE L.C.R., BP N° 10, 91401 Orsay Cedex, (France) |
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Abstract: | The low pressure metalorganic chemical vapor deposition epitaxial growth and characterization of InP, Ga0.47In0.53 As and GaxIn1-xAsyP1-y, lattice-matched to InP substrate are described. The layers were found to have the same etch pit density (EPD) as the substrate.
The best mobility obtained for InP was 5300 cm2 V−1S−1 at 300 K and 58 900 cm2 V−1 S−1 at 772K, and for GaInAs was 11900 cm2 V−1 S−1 at 300 K, 54 600 cm2 V−1 S−1 at 77 K and 90 000 cm V−1S−1 at 2°K. We report the first successful growth of a GaInAs-InP superlattice and the enhanced mobility of a two dimensional
electron gas at a GaInAs -InP heterojunction grown by LP-MO CVD. LP MO CVD material has been used for GaInAsPInP, DH lasers
emitting at 1.3 um and 1.5 um. These devices exhibit a low threshold current, a slightly higher than liquid phase epitaxy
devices and a high differential quantum efficiency of 60%. Fundamental transverse mode oscillation has been achieved up to
a power outpout of 10 mW. Threshold currents as low as 200 mA dc have been measured for devices with a stripe width of 9 um
and a cavity length of 300 um for emission at 1.5 um. Values of T in the range 64–80 C have been obtained. Preliminary life
testing has been carried out at room temperature on a few laser diodes (λ = 1.5μm). Operation at constant current for severalthousand
hours has been achieved with no change in the threshold current. |
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Keywords: | Metalorganic-CVD InP GaxIn1-xAs GaxIn1-xAsy P1-y superlattice laser |
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