| Dopant Effects on Defects in GaN Films Grown by Metal-Organic Chemical Vapour Deposition |
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| 作者姓名： | 陆敏 杨华 黎子兰 杨志坚 李忠辉 任谦 金春来 陆曙 章蓓 张国义 |
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| 作者单位： | [1]SchoolofPhysicsandCenterforWideBand-GapResearch,PekingUniversity,Beijing100871 [2]StateKeyLaboratoryforArtificialMicrostructuresandMesoscopicPhysics,Beijing100871 |
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| 摘 要： | The effects of dopants on the defects of GaN films were investigated by using different methods, such as wet,etching of pits, x-ray dit~action and photoluminescence (PL). Three kinds of the samples were prepared with different dopants, that is, nominally undoped, Si-doped and Mg-doped GaN films. It was found that the lowest density of the, etched pit was existed in the nominally undoped GaN, while the highest in the Mg-doped sample.The effects of the dopants on the, etching pits were discussed.
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| 关 键 词： | GaN 氮化镓薄膜 薄膜生长 金属-有机化学气相沉积 掺杂效应 半导体 |
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